FDD3510H mosfet equivalent, dual n&p-channel mosfet.
Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID =.
* Inverter
* H-Bridge
D1 D1/D2
D2
G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel
G2
S2 P-Channel
MOSFET Maximum .
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