FDD3510H datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID =.

Application

* Inverter
* H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum .

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. A.

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